SVD1N80B/f/m/t_datasheet 1a, 800v n-channel mosfet hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 1 of 10 nomenclature ordering information part no. package marking material packing svd1n80m to-251-3l svd1n80m pb free tube svd1n80t to-220-3l svd1n80t pb free tube SVD1N80B to-92-3l 1n80b pb free bulk SVD1N80Btr to-92-3l 1n80b pb free ammo svd1n80f to-220f-3l svd1n80f pb free tube general description SVD1N80B/f/m/t is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary s-rin tm structure vdmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc- dc converters and h-bridge pwm motor drivers. 2 3 1 1.gate 2.drain 3.source to-220-3l to-251-3l features ? 1a,800v,r ds(on)(typ) =13.5 @v gs =10v ? low gate charge ? low crss ? fast switching ? improved dv/dt capability to-220f-3l to-92-3l
SVD1N80B/f/m/t_datasheet hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 2 of 10 absolute maximum ratings (tc=25 c unless otherwise noted) rating characteristics symbol s vd1n80b svd1n80f s vd1n80m svd1n80t unit drain-source voltage v ds 800 v gate-source voltage v gs 30 v drain current i d 1.0 a drain current pulsed i dm 4.0 a 9 23 33 45 w power dissipation(t c =25 c) -derate above 25 c p d 0.07 0.18 0.26 0.36 w/ c single pulsed avalanche energy (note 1) e as 23 mj operation junction temperature range t j -55 +150 c storage temperature range t stg -55 +150 c thermal characteristics rating characteristics symbol SVD1N80B svd1n80f svd1n80m svd1n80t unit thermal resistance, junction-to- case r jc 13.89 4.43 3.79 2.78 c/w thermal resistance, junction-to- ambient r ja 120 120 110 62.5 c/w electrical characteristics (t c =25 c unless otherwise noted) characteristics symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 800 -- -- v drain-source leakage current i dss v ds =800v, v gs =0v -- -- 10 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltage v gs(th) v gs = v ds , i d =250a 3.1 -- 4.4 v static drain- source on state resistance r ds(on) v gs =10v, i d =0.5a -- 13.5 16 input capacitance c iss -- 160.9 - output capacitance c oss -- 15.5 - reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz -- 1.35 - pf turn-on delay time t d(on) -- 8.13 - turn-on rise time t r -- 15.13 - turn-off delay time t d(off) -- 12.80 - turn-off fall time t f v dd =400v,i d =1.0a, r g =25 (note 2,3) -- 20.93 - ns total gate charge q g -- 5.35 - gate-source charge q gs -- 1.28 - gate-drain charge q gd v ds =640v,i d =1.0a, v gs =10v (note 2,3) -- 2.59 - nc
SVD1N80B/f/m/t_datasheet source-drain diode ratings and characteristics characteristics symbol test conditions min. typ. max. unit continuous source current i s -- -- 1.0 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 4.0 a diode forward voltage v sd i s =1.0a,v gs =0v -- -- 1.5 v reverse recovery time t rr -- 160 -- ns reverse recovery charge q rr i s =1.0a,v gs =0v, di f /dt=100a/s (note 2) -- 0.3 -- c notes: 1. l=30mh,i as =1.17a,v dd =110v,r g =25 , starting t j =25 c; 2. pulse test: pulse width 300 s,duty cycle 2%; 3. essentially independent of operating temperature. typical characteristics v gs , gate-source voltage [v] i d , drain current [a] figure 1. on-region characteristics figure 2. transfer characteristics i d , drain current [a] r ds(on) [ ], drain-source on-resistance v sd , source-drain voltage [v] i dr reverse drain current [a] figure 3. on-resitance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature v ds drain-source voltage[v] i d drain current [a] 10 0.1 0.1 1 10 012345678910 variable v gs =4.0v v gs =4.5v v gs =5.0v v gs =5.5v v gs =6.0v v gs =7.0v v gs =8.0v -55 c 25 1.0 . hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 3 of 10 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 00 . 511 . 52 v gs = 10.0v v gs = 20.0v 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 -55 c 25 c 150 c c 150 c ? : 1. 250 s pulse test 2. v ds =40v notes: 1. 250 s pulse test 2. v gs =0v note: t j =25c 1 v gs =10v v gs =15v notes: 1. 250 s pulse test 2. tc=25 c
SVD1N80B/f/m/t_datasheet typical characteristics (continued) hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 4 of 10
SVD1N80B/f/m/t_datasheet typical characteristics (continued) hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 5 of 10 0 0.2 0.4 0.6 0.8 25 50 75 100 125 150 1.0 t c , case temperature[c] figure 10. maximum drain current vs. case temperature 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 figure 9-3. max. safe operating area(svd1n80m) v ds , drain source voltage[v] 1ms dc 10ms 100s notes: 1.t c =25c 2.t j =150c 3.single pulse 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 figure 9-4. max. safe operating area(svd1n80t) v ds , drain source voltage[v] operation in this area is limited by r ds(on) operation in this area is limited by r ds(on) 100s 1ms 10ms dc notes: 1.t c =25c 2.t j =150c 3.single pulse
SVD1N80B/f/m/t_datasheet typical test circuit v gs 10v charge 12v 50k 300nf same type as dut dut v gs hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 6 of 10 3ma v ds qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switchi ng test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
SVD1N80B/f/m/t_datasheet package outline to-220-3l unit: mm to-251-3l unit: mm hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 7 of 10
SVD1N80B/f/m/t_datasheet package outline(continued) to-92-3l(1) unit: mm to-92-3l(2) unit: mm 3.500.30 1.300.25 0.450.20 4.60.3 hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 8 of 10 14.00.5 14.30.5
SVD1N80B/f/m/t_datasheet package outline(continued) to-220f-3l(1) unit: mm to-220f-3l(2) unit: mm hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 9 of 10
SVD1N80B/f/m/t_datasheet hangzhou silan microelectronics co.,ltd rev:1.0 2011.01.17 http://www.silan.com.cn page 10 of 10 disclaimer: ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manuf acturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers! attachment revision history date rev description page 2011.01.17 1.0 original
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